کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5426276 | 1395885 | 2006 | 6 صفحه PDF | دانلود رایگان |

The deposition of Si at room temperature on the ten-fold quasicrystalline surface of d-Al-Ni-Co has been investigated by scanning tunnelling microscopy. At a coverage of 0.30 ML, Si pentagons in two orientations related by inversion symmetry are observed on the same substrate terrace. The side-length of the pentagons is 4.2 ± 0.2 à . At this coverage, the Si adlayer displays quasiperiodic order. Depressions related to pentagonal features observed in STM images of the clean d-Al-Ni-Co substrate are proposed as plausible adsorption sites for the Si adatoms. As the Si coverage is increased, the well-defined structures observed are no longer distinguishable. At coverages above the monolayer, the Si overlayer follows a rough three-dimensional growth mode.
Journal: Surface Science - Volume 600, Issue 20, 15 October 2006, Pages 4752-4757