کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5426277 1395885 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth and characterization of thin PTCDA films on 3C-SiC(0 0 1)c(2 Ã— 2)
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Growth and characterization of thin PTCDA films on 3C-SiC(0 0 1)c(2 Ã— 2)
چکیده انگلیسی

The growth of thin 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) films on a 3C-SiC(0 0 1)c(2 × 2) substrate has been studied by means of photoelectron spectroscopy (PES) and atomic force microscopy (AFM). In the first monolayer the molecules interact with the substrate mainly through the O atoms in the end groups of the molecule. The O atoms have a higher binding energy in the first molecular layer compared to the following layers. No chemical shifts are observed in the Si 2p spectra or in the C 1s spectra from the perylene core of the molecules. From the VB spectra and LEED pattern we conclude that the substrate remains in the c(2 × 2) reconstruction after PTCDA deposition. For thicker films a Stranski-Krastanov film growth was observed with flat lying molecules relative to the substrate.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 600, Issue 20, 15 October 2006, Pages 4758-4764
نویسندگان
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