کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
542637 871564 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Numerical optimization of an extracted HgCdTe IR-photodiodes for 10.6-μm spectral region operating at room temperature
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Numerical optimization of an extracted HgCdTe IR-photodiodes for 10.6-μm spectral region operating at room temperature
چکیده انگلیسی

The electrical and photoelectrical properties of long wavelength n̲+pp̲+ Hg1−xCdx  Te structures have been optimized by using an exact numerical analysis. In this analysis we have been taking into account the degeneracy, non-parabolicty, deviation from thermodynamical equilibrium and graded interfaces. The band diagram, electrical field, carrier mobility, photoelectrical gain, responsivity, noise and detectivity have been calculated and optimized as a function of different variable such as alloy composition, doping concentration, thickness, and applied voltage to obtain optimized performance at room temperature. This numerical simulation can be used to optimize the mentioned parameters for other structures such as n̲+np̲+, n̲+p operating in photodiode, or photovoltaic mode.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 38, Issue 2, February 2007, Pages 216–221
نویسندگان
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