کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5426415 | 1395889 | 2006 | 5 صفحه PDF | دانلود رایگان |
The electronic structure of the InSe/Pt interface has been studied by angle-resolved and X-ray photoemission measurements. From these results, it has been found that Pt incorporates into the InSe lattice at initial stages of Pt deposition, acting as a surface acceptor-like which tends to turn the interface into intrinsic. Beyond certain Pt submonolayer coverage, the band-bending process appears to be controlled by localized states appearing close to the Fermi level. The appearance of these states has been attributed to a reaction-like mechanism between diffused Pt and InSe atoms. For this interface, it has been found that a final electronic barrier of â¼1.2Â eV is formed, close to that expected for an abrupt InSe/Pt Schottky barrier. Nevertheless, the atomic structure of the interface is far from that expected for an ideal Schottky interface.
Journal: Surface Science - Volume 600, Issue 18, 15 September 2006, Pages 3734-3738