کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
542642 | 871564 | 2007 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Improved properties of Al-doped ZnO film by electron beam evaporation technique Improved properties of Al-doped ZnO film by electron beam evaporation technique](/preview/png/542642.png)
High-quality Al-doped ZnO (AZO) thin films have been fabricated by electron beam evaporation technique. The effect of the growth temperature on the optical and electrical properties of the electron-beam (e-beam) evaporated AZO film is investigated. X-ray diffraction measurements have shown that e-beam evaporated films are highly c-axis oriented at appropriate growth temperature. Transmittance measurement showed that the best optical and structural quality of the e-beam evaporated AZO film occurred at 200 °C. The scanning electron microscope images have shown that the surfaces of the e-beam evaporated AZO became smoother for the growth temperature at and above 200 °C. Finally, the maximum electrical resistivity of 2.5×10−4 Ω cm and optical transmittance of more than 85% has been found at 200 °C growth temperature, which explains its relation with the crystal quality of the film.
Journal: Microelectronics Journal - Volume 38, Issue 2, February 2007, Pages 245–250