کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5426422 1395889 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Formation of Ti and TiN ultra-thin films on Si by ion beam sputter deposition
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Formation of Ti and TiN ultra-thin films on Si by ion beam sputter deposition
چکیده انگلیسی

Ultra-thin titanium and titanium nitride films on silicon substrate were obtained by ion beam sputtering of titanium target in vacuum and nitrogen atmosphere, using argon ions with energy of 5 keV and 15 μA target current. Elemental composition and chemical state of obtained films were investigated by X-ray photoelectron spectroscopy with using Mg-Kα X-ray radiation (photon energy 1253.6 eV). It was shown that it is possible to form both ultra-thin titanium films (sputtering in vacuum) and ultra-thin titanium nitride films (sputtering in nitrogen atmosphere) in the same temperature conditions. Photoelectron spectra of samples surface, obtained in different steps of films synthesis, detailed spectra of photoelectron emission from Si 2p, Ti 2p, N 1s core levels and also X-ray photoelectron spectra of Auger electrons emission are presented.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 600, Issue 18, 15 September 2006, Pages 3766-3769
نویسندگان
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