کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5426436 | 1395889 | 2006 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Electronic structure of oxidized SiC(0 0 0 1) studied by inverse photoemission spectroscopy Electronic structure of oxidized SiC(0 0 0 1) studied by inverse photoemission spectroscopy](/preview/png/5426436.png)
Starting from the silicon rich (3 Ã 3) reconstruction of SiC(0 0 0 1) we prepared oxidized surfaces by hydrogen etching as well as by exposure to molecular oxygen. LEED pictures show a (1 Ã 1)-reconstructed surface with a faint (3Ã3)R30° structure being more pronounced for the hydrogen-etched surfaces. Auger spectra reveal a distinct change in the shape of the SiLVV peak indicating the existence of Si-O bonds on the surface. Inverse photoemission (IPE) is employed to study the electronic structure above the Fermi level of the oxidized samples. On the hydrogen-etched surface difference spectra reveal a surface feature at 1 eV above the Fermi level that presumably originates from an isolated dangling bond on ordered patches of the oxidized surface.
Journal: Surface Science - Volume 600, Issue 18, 15 September 2006, Pages 3839-3844