کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
542647 | 871564 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Parametric properties of the electron spin relaxation in InAs quantum dots
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Parametric properties of the electron spin relaxation in InAs quantum dots Parametric properties of the electron spin relaxation in InAs quantum dots](/preview/png/542647.png)
چکیده انگلیسی
The electron spin relaxation rates Î under different conditions in InAs quantum dots (QDs) with local elastic twists have been calculated by using the perturbation method. It is shown from the calculational results that the rate Î is dominated by the magnitude of the absolute value of anisotropic electron g factor, |gα|(α=x,y,z) and markedly influenced by the difference between the values of gα, which indicates there is a proper size for InAs QDs to minimize the rate. The relaxation rate is noticeably affected by the orientations of the magnetic field n(θ,Ï), and the ratio of the rates can be obtained by changing orientations of the field in QDs, where the maximum in our calculation is Îmax/Îminâ6.4.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 38, Issue 2, February 2007, Pages 267-271
Journal: Microelectronics Journal - Volume 38, Issue 2, February 2007, Pages 267-271
نویسندگان
Hongliang Jiang, Duanzheng Yao, Shaohua Gong, Xiaobo Feng,