کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
542647 871564 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Parametric properties of the electron spin relaxation in InAs quantum dots
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Parametric properties of the electron spin relaxation in InAs quantum dots
چکیده انگلیسی
The electron spin relaxation rates Γ under different conditions in InAs quantum dots (QDs) with local elastic twists have been calculated by using the perturbation method. It is shown from the calculational results that the rate Γ is dominated by the magnitude of the absolute value of anisotropic electron g factor, |gα|(α=x,y,z) and markedly influenced by the difference between the values of gα, which indicates there is a proper size for InAs QDs to minimize the rate. The relaxation rate is noticeably affected by the orientations of the magnetic field n(θ,ϕ), and the ratio of the rates can be obtained by changing orientations of the field in QDs, where the maximum in our calculation is Γmax/Γmin≈6.4.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 38, Issue 2, February 2007, Pages 267-271
نویسندگان
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