کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5426695 | 1395897 | 2006 | 6 صفحه PDF | دانلود رایگان |

The consequences of Ge deposition on Br-terminated Si(1Â 0Â 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650Â K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3Â ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7Â ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800Â K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1Â 0Â 0).
Journal: Surface Science - Volume 600, Issue 14, 15 July 2006, Pages 2907-2912