کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5426697 | 1395897 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structure of ordered and disordered InxGa1âxP(0 0 1) surfaces prepared by metalorganic vapor phase epitaxy
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ordered and disordered InGaP(0Â 0Â 1) films were grown by metalorganic vapor-phase epitaxy and studied by low energy electron diffraction, reflectance difference spectroscopy, and X-ray photoemission spectroscopy. Both alloy surfaces were covered with a monolayer of buckled phosphorus dimers, where half of the phosphorus atoms were terminated with hydrogen. Ordered InGaP(0Â 0Â 1) appeared indium rich, and exhibited a reflectance difference spectrum like that of InP(0Â 0Â 1). These results support a model whereby the strain energy on the ordered InGaP surface is reduced by aligning the group III atoms in alternating [1Â 1Â 0] rows, with the indium and gallium bonding to the buckled-down and buckled-up phosphorus atoms, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 600, Issue 14, 15 July 2006, Pages 2924-2927
Journal: Surface Science - Volume 600, Issue 14, 15 July 2006, Pages 2924-2927
نویسندگان
S.F. Cheng, Y. Sun, D.C. Law, S.B. Visbeck, R.F. Hicks,