gm-boosted flat gain UWB low noise amplifier with active inductor-based input matching network

HighlightAn ultra-wideband (UWB) CMOS low noise amplifier (LNA) utilizing an active inductor-based input matching network is presented.
• The proposed 0.18 µm CMOS LNA consists of three stages; a gm-boosted common-gate input stage, a common-source gain stage, and an output buffer.
• Designed in the 3.1–10.6 GHz UWB frequency range, the proposed circuit exhibits a flat forward gain of 12.1±0.7 dB, a reverse isolation less than −56.1 dB, an input return loss less than −9.5 dB, and a noise figure of 4.56–4.7 dB over the entire frequency band, while the total power dissipation is 13.6 mW under a 1.8 V supply.

In this paper, an ultra-wideband (UWB) CMOS low noise amplifier (LNA) utilizing an active inductor-based input matching network is presented. The proposed 0.18 µm CMOS LNA consists of three stages; a gm-boosted common-gate input stage, a common-source gain stage, and an output buffer. Designed in the 3.1–10.6 GHz UWB frequency range, the proposed circuit exhibits a flat forward gain of 12.1±0.7 dB, a reverse isolation less than −56.1 dB, an input return loss less than −9.5 dB, and a noise figure of 4.56–4.7 dB over the entire frequency band, while the total power dissipation is 13.6 mW under a 1.8 V supply.