کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5426733 | 1395900 | 2006 | 9 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Ultra-thin Si overlayers on the TiO2 (1 1 0)-(1 Ã 2) surface: Growth mode and electronic properties Ultra-thin Si overlayers on the TiO2 (1 1 0)-(1 Ã 2) surface: Growth mode and electronic properties](/preview/png/5426733.png)
The growth of thin subnanometric silicon films on TiO2 (1 1 0)-(1 Ã 2) reconstructed surfaces at room temperature (RT) has been studied in situ by X-ray and ultra-violet photoelectron spectroscopies (XPS and UPS), Auger electron and electron-energy-loss spectroscopies (AES and ELS), quantitative low energy electron diffraction (LEED-IV), and scanning tunneling microscopy (STM). For Si coverage up to one monolayer, a heterogeneous layer is formed. Its composition consists of a mixture of different suboxides SiOx (1 < x ⩽ 2) on top of a further reduced TiO2 surface. Upon Si coverage, the characteristic (1 Ã 2) LEED pattern from the substrate is completely attenuated, indicating absence of long-range order. Annealing the SiOx overlayer results in the formation of suboxides with different stoichiometry. The LEED pattern recovers the characteristic TiO2 (1 1 0)-(1 Ã 2) diagram. LEED I-V curves from both, substrate and overlayer, indicate the formation of nanometric sized SiOx clusters.
Journal: Surface Science - Volume 600, Issue 13, 1 July 2006, Pages 2696-2704