کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5426820 | 1395908 | 2006 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoemission study of cobalt interaction with the oxidized Si(1 0 0)2 Ã 1 surface
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Photoemission study of cobalt interaction with the oxidized Si(1 0 0)2 Ã 1 surface Photoemission study of cobalt interaction with the oxidized Si(1 0 0)2 Ã 1 surface](/preview/png/5426820.png)
چکیده انگلیسی
The interaction of cobalt atoms with an oxidized Si(1 0 0)2 Ã 1 surface was studied by photoelectron spectroscopy with synchrotron radiation at room and elevated temperatures. The SiOx layer grown in situ on the crystal surface was â¼0.3 nm thick, and the amount of deposited cobalt was varied within eight atomic layers. It was found that Co atoms could penetrate under the SiOx layer even at room temperature in the initial growth. As the Co amount increased, a ternary Co-O-Si phase was formed at the interface, followed by a Co-Si solid solution. Silicide synthesis associated with the decomposition of these phases started under the SiOx layer at â¼250 °C, producing cobalt disilicide with a stable CaF2-type of structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 600, Issue 12, 15 June 2006, Pages 2449-2456
Journal: Surface Science - Volume 600, Issue 12, 15 June 2006, Pages 2449-2456
نویسندگان
M.V. Gomoyunova, I.I. Pronin, D.E. Malygin, N.R. Gall, D.V. Vyalikh, S.L. Molodtsov,