Comparative STM study of SPE growth of FeSi2 nanodots on Si(1 1 1)7 × 7 and Si(111)3×3-R30°-B surfaces

Using scanning tunneling microscopy, solid phase epitaxial growth of FeSi2 nanodots on Si(111)3×3-R30°-B surface has been studied in the temperature range of 400-700 °C and Fe coverage of up to 0.5 monolayer. It has been found that density of nanodots formed on Si(111)3×3-R30°-B surface is essentially higher than that on Si(1 1 1)7 × 7 surface at the same temperature and coverage. Density of the 2 × 2 islands and structural defects is reduced on Si(111)3×3-R30°-B surface in comparison with that on Si(1 1 1)7 × 7 surface.