کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5426910 | 1395912 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical conductance at initial stage in epitaxial growth of Pb on modified Si(1 1 1) surface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical conductance at initial stage in epitaxial growth of Pb on modified Si(1 1 1) surface Electrical conductance at initial stage in epitaxial growth of Pb on modified Si(1 1 1) surface](/preview/png/5426910.png)
چکیده انگلیسی
The electrical conductance and RHEED intensities as a function of the coverage have been measured during Pb depositions at 105Â K on Si(1Â 1Â 1)-(6Â ÃÂ 6)Au with up to 4.2Â ML of annealed Pb. The experiments show the strong influence of used substrates on the behavior of the conductance during the epitaxy of Pb atoms, especially for very initial stage of growth. Oscillations of the conductance during the layer-by-layer growth are correlated with RHEED intensity oscillations. The analysis of the conductance behavior is made according to the theory described by Trivedi and Aschcroft [N. Trivedi, N. Aschcroft, Phys. Rev. B 38 (1988) 12298].
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 600, Issue 8, 15 April 2006, Pages 1650-1653
Journal: Surface Science - Volume 600, Issue 8, 15 April 2006, Pages 1650-1653
نویسندگان
Z. Korczak, T. KwapiÅski,