کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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542716 | 871569 | 2006 | 7 صفحه PDF | دانلود رایگان |

A new approach was developed in this work to fabricate metallic nano-cantilevers using a one-mask process and a deep reactive ion etch (DRIE) technique. 40-nm-thick Al and 70-nm-thick Au cantilevers of lengths from 5 μm and widths in the range of 200–300 nm were fabricated on a silicon substrate. The silicon underneath the suspended beams was completely etched. Short Al nano-cantilevers were used to find local residual stress induced in rapid thermal oxidation and the oxidized spots according to the deflection profiles of the nano-cantilevers. The deflection profiles were determined with the aid of a scanning electron microscope (SEM). Compared with a single feedback in the existing cantilever-based static methods, i.e., the deflection of the open end of a cantilever, the whole deflection profile provides more information regarding the effect of surface stresses on a cantilever.
Journal: Microelectronics Journal - Volume 37, Issue 11, November 2006, Pages 1306–1312