Gate-level dual-threshold static power optimization methodology (GDSPOM) using path-based static timing analysis (STA) technique for SOC application

This paper describes a novel gate-level dual-threshold static power optimization methodology (GDSPOM), which is based on the static timing analysis (STA) technique for designing high-speed low-power SOC applications using 90 nm multi-threshold complementory metal oxide semiconductor (MTCMOS) technology. The cell libraries come in fixed threshold—high Vth for good standby power and low Vth for high speed. Based on this optimization technique using two cell libraries with different threshold voltages, a 16-bit multiplier using the dual-threshold cells meeting the speed requirement has been designed to have a 50% less leakage power consumption when compared to the one using only the low-threshold cell library.