BSIM4 parameter extraction for tri-gate Si nanowire transistors

• SPICE parameters of BSIM4 were successfully extracted for tri-gate NW Tr.
• Dependence of Rsd on Tr. geometry and process can be observed on the parameter.
• Single sets of parameters for Lg down to 35 nm were obtained.
• The parameters will be a useful tool for characterizing the circuit performance.

We investigated the BSIM4 parameter extraction procedure for tri-gate Si nanowire transistors with different geometries and fabrication processes. SPICE modeling tool was used to extract the parameter from Id–Vg to Id–Vd characteristics with liner and saturation region. Dependence of source/drain parasitic resistances on nanowire width and gate sidewall thickness can be observed on the extracted parameters. Furthermore, parasitic capacitance was extracted from three-dimensional TCAD simulation with our fabricated device structure. Single sets of parameters can reproduce I–V characteristics with Lg down to 35 nm for n-channel nanowire transistors. It was found that the extracted parameters will be a useful tool for characterizing the circuit performance of nanowire transistor. Therefore, this procedure is applicable to extract the BSIM4 model parameters for NW Tr. as well as other multi-gate FETs.