An accurate electro-thermal model for merged SiC PiN Schottky diodes

The paper presents a SiC merged PiN Schottky diode model dedicated to the dynamic as-well-as very accurate static simulation. The model takes into account the temperature dependence of device characteristics and combines in a single model the behaviour typical for bipolar and unipolar devices. The presented electro-thermal simulations of the diode produce accurate results, consistent with the measurements. The dynamic model verification has been also presented on the example of a boost power converter.