کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5435414 | 1509351 | 2017 | 11 صفحه PDF | دانلود رایگان |
- Reduction of aggregation-induced phosphorescence quenching in thin solid film by Tert-butyl substituents on Pt(II) complex.
- Efficient deep red OLEDs with CIE of (0.69, 0.3).
- Negative differential resistance with ON/OFF current ratio higher than 103.
Thanks to its deep-red emission, [Pt(II)(tetra-tert-butylSalophen)] 1 is used as a dopant in Tris-(8-hydroxyquinoline)aluminium (Alq3) for the fabrication of organic light-emitting diodes (OLEDs). This complex is compared to the alike [Pt(II) Salophen] 2. Energy levels of HOMO and LUMO determined by cyclic voltammetry and DFT calculation are in good accordance for energy transfer from Alq3 to 1 or 2. A stable color (Commission Internationale de l'Energie (CIE) coordinates of (0.69, 0.3)) with performance (605Â Cd/m2 and 755Â A/m2 at 14Â V) and an external quantum efficiency (EQE) of 21% were obtained when adding N,Nâ²-Di(1-naphthyl)-N,Nâ²-diphenyl-(1,1â²-biphenyl)-4,4â²-diamine (NPD) as hole collector. Optoelectrical studies evidence an improvement of the electroluminescence performance due to the reduction of the aggregation-induced quenching in complex 1 based thin solid film. Furthermore, a negative differential resistance (NDR) characteristic is observed on monolayer based devices at low voltage region upon electrical driving stress, with an ON/OFF current ratio higher than 103, suggesting a potential application in organic memory devices.
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Journal: Synthetic Metals - Volume 227, May 2017, Pages 106-116