کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543647 | 871681 | 2009 | 9 صفحه PDF | دانلود رایگان |
We present a pure CMOS bandgap voltage reference with a low quiescent current and high output current driving capability. The circuit sources a driving current of up to 1.5 mA with the reference voltage kept above 98.5% of its designated 1.2 V, and up to 6 mA before the voltage drops to 90%. The circuit achieves a very low supply current of 13μA, a low power of 30μW, a line regulation of ±2.5mV/V and a load regulation of ±7mV/mA. The reference is implemented in a 1μm pure CMOS process with Vtn≈|Vtp|≈0.7V at 25∘C using substrate pnp. A startup circuit, which shuts down itself after a controlled delay using Miller effect, is also introduced. By utilizing the body effect of the input transistors, the turn-on threshold of the startup circuit is raised to about 1 V, making it a perfect match for the reference architecture. Silicon measurements are in good agreement with simulations.
Journal: Microelectronics Journal - Volume 40, Issue 11, November 2009, Pages 1514–1522