کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5437563 | 1398175 | 2017 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-temperature dielectric and relaxation behavior of Yb-doped Bi0.5Na0.5TiO3 ceramics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Microstructure, phase transition and dielectric properties of Yb-doped Bi0.5Na0.5TiO3 (BNT) ceramics were investigated. It is found that ytterbium promotes the grain growth and densification of the ceramics while Ti-rich impurity appears due to the compensation of Ti-vacancy. The dielectric operational temperature range of the ceramics with a±15% tolerance was greatly broaden until 500 °C by ytterbium doping. Meanwhile, the diffuseness of the diffuse phase transition increases with the increase of doping Yb. BNT ceramics with 3 mol% Yb doping shows a near-plateau dielectric behavior in a broad temperature range from 147 to 528 °C and a low dielectric loss (<0.025) from 154 to 356 °C, indicating that it is a promising material for applications in high-temperature capacitor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 43, Issue 7, May 2017, Pages 5564-5573
Journal: Ceramics International - Volume 43, Issue 7, May 2017, Pages 5564-5573
نویسندگان
Feifei Han, Jianming Deng, Xiaoqi Liu, Tianxiang Yan, Shaokai Ren, Xing Ma, Saisai Liu, Biaolin Peng, Laijun Liu,