کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5437614 | 1398176 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermoelectric properties and figure of merit of perovskite-type Sr1âxLaxSnO3 ceramics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Thermoelectric properties and figure of merit of perovskite-type Sr1âxLaxSnO3 ceramics Thermoelectric properties and figure of merit of perovskite-type Sr1âxLaxSnO3 ceramics](/preview/png/5437614.png)
چکیده انگلیسی
The thermoelectric properties of perovskite-type Sr1âxLaxSnO3 ceramics with x=0.01-0.05 were evaluated from the Seebeck coefficient S, electrical conductivity Ï, and thermal conductivity κ measured at high temperatures. The La-doped ceramics were n-type semiconductors exhibiting thermally activated electrical conduction behaviors in the temperature range of 473-1073 K. Eelectron carriers were introduced into the conduction band from doped La atoms up to x=0.03, which was the solubility limit of La at Sr site. The temperature dependence of the κ values for the ceramics was unaffected by both the La content and the microstructures. Estimations of the electronic thermal conductivities by the Wiedemann-Franz law revealed that the phonon thermal conductivities were dominant for all ceramics. The dimensionless figure of merit ZT increased with increasing temperature for all ceramics and reached 0.02-0.05 at 1073 K. In contrast to cubic Ba1âxLaxSnO3 ceramics, bending of the Sn-O-Sn bonds due to octahedral tilting distortion in Sr1âxLaxSnO3 lowered the electron mobility, decreasing the power factor S2Ï and ZT values, although it effectively reduced the phonon mean free path, decreasing the κ values.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 43, Issue 13, September 2017, Pages 9653-9657
Journal: Ceramics International - Volume 43, Issue 13, September 2017, Pages 9653-9657
نویسندگان
Masahiro Yasukawa, Kazushige Ueda, Satoru Fujitsu, Hideo Hosono,