Preparation and characterization of transparent indium- doped TiO2 films deposited by MOCVD

Titanium dioxide (TiO2) films doped with different indium (In) concentrations have been prepared on SrTiO3 (STO) substrates by high vacuum metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) analyses revealed the TiO2 films doped with low In concentrations to be [001] oriented anatase phase and the films with high In concentrations to present polycrystalline structures. The 1.8% In-doped TiO2 film exhibited the best electrical conductivity properties with the lowest resistivity of 8.68×10−2 Ω cm, a Hall mobility of 10.9 cm2 V−1 s−1 and a carrier concentration of 6.5×1018 cm−3. The films showed excellent transparency with average transmittances of over 85% in the visible range.