کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5438012 | 1398180 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Pyrochlore structure and dielectric properties of bismuth zinc niobate thin films prepared by RF sputtering
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Bi1.5Zn1.0Nb1.5O7 (BZN) thin films with thickness from 60 nm to 200 nm were prepared by radio-frequency magnetron sputtering and post-annealed from 550 °C to 650 °C. The x-ray diffraction results indicated that the BZN thin films possessed a cubic pyrochlore phase. The BZN thin films exhibited thickness-independent dielectric properties with dielectric constant of ~180 and low loss tangent less than 1% at 10 kHz as the film thickness decreased to 60 nm. The BZN thin films with thickness of 200 nm and post-annealed at 650 °C had a tunability of 32.7% at a DC bias field of 1.5 MV/cm. The results suggest that the BZN thin films have promising applications on the embedded capacitors, tunable devices and energy storage devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 43, Issue 14, 1 October 2017, Pages 10737-10742
Journal: Ceramics International - Volume 43, Issue 14, 1 October 2017, Pages 10737-10742
نویسندگان
Fan He, Wei Ren, M. Saeed Khan, Peng Shi,