کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5438069 | 1398180 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of a ZnO buffer layer on structural and electrical properties of ZnO:Al,P thin films grown by RF magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of a ZnO buffer layer on structural and electrical properties of ZnO:Al,P thin films grown by RF magnetron sputtering Effect of a ZnO buffer layer on structural and electrical properties of ZnO:Al,P thin films grown by RF magnetron sputtering](/preview/png/5438069.png)
چکیده انگلیسی
Structural and electrical properties of ZnO:Al0.01P0.04 thin films were investigated with respect to the growth temperature of the ZnO buffer layers deposited by RF magnetron sputtering. The ZnO buffer layers on c-plane sapphires showed three different types of in-plane orientation relationships between ZnO and Al2O3 at different growth temperatures: ZnO[101Ì
0] // Al2O3[101Ì
0] at 200 °C, a mixture of ZnO[101Ì
0] // Al2O3[101Ì
0] and ZnO[101Ì
0] // Al2O3[112Ì
0] at 300 °C, and ZnO[101Ì
0] // Al2O3[112Ì
0] at 600 °C. The in-plane orientation of the ZnO:Al0.01P0.04 thin film followed the orientation of the ZnO buffer layer regardless of its growth temperature. The ZnO:Al0.01P0.04 film grown on a ZnO buffer layer deposited at 600 °C had a carrier concentration of 1.18 à 1016 cmâ3, mobility of 7.16 à 10° cm2/(V s), and resistivity of 7.36 à 101 Ω cm, indicating p-type characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 43, Issue 14, 1 October 2017, Pages 11163-11169
Journal: Ceramics International - Volume 43, Issue 14, 1 October 2017, Pages 11163-11169
نویسندگان
Seunghak Shin, Changhun Kim, Jung-A. Lee, Young-Woo Heo, Joon-Hyung Lee, Jeong-Joo Kim,