کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5438135 | 1398181 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dielectric properties of Al-doped Ti3SiC2 as a novel microwave absorbing material
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Dielectric properties of Al-doped Ti3SiC2 as a novel microwave absorbing material Dielectric properties of Al-doped Ti3SiC2 as a novel microwave absorbing material](/preview/png/5438135.png)
چکیده انگلیسی
Al-doped Ti3SiC2 powders were synthesized by solid state reaction under a vacuum atmosphere from Ti/Si/TiC powders, with an optimum Al doping content. Results showed that the Ti3SiC2 major phase could be generated at a temperature as low as 1250 °C through Al doping, and that the doped powders had a relatively narrow particle size distribution with a good dispersibility. The formation of Ti3Si1âxAlxC2 solid solution was further proved by XPS. The microwave dielectric parameters and reflection loss of the prepared Al-doped Ti3SiC2 samples were determined in the frequency range of 8.2-12.4 GHz. It was found that the sample synthesized at 1350 °C showed the high values in both the imaginary part of permittivity εⳠand dielectric loss tan δ, which were 4.39-7.32 and 0.57-0.78, respectively. For the microwave absorbing coating with a 2.6 mm thickness of the sample, a better reflection loss of almost below â12 dB was obtained in the whole frequency range of 8.2-12.4 GHz.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 43, Issue 1, Part A, January 2017, Pages 222-227
Journal: Ceramics International - Volume 43, Issue 1, Part A, January 2017, Pages 222-227
نویسندگان
Zhimin Li, Zi Yang, Maolin Zhang, Yangxi Yan, Yunxia Huang, Yue Hao,