کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543825 | 871688 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reliability of reverse properties of power semiconductor devices:: Influence of surface dielectric layer and its experimental verification
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Reliability of reverse properties of power semiconductor devices is an important condition for their practical application. Usual standard tests do not reveal total information concerning the technological genetic aspects of devices production. These aspects can be linked with individual technological operations, most frequently with preparation of semiconductor surface and its protection by dielectric layers. Properties of dielectric layers influence the time stability of reverse currents by means of a change of dielectric permittivity. This article analyses some physical causes of the time-instable behaviour of devices and also presents a special method and equipment for reliable tests.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 39, Issue 6, June 2008, Pages 851–856
Journal: Microelectronics Journal - Volume 39, Issue 6, June 2008, Pages 851–856
نویسندگان
V. Papež, B. Kojecký, D. Šámal,