کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543834 871688 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Superjunction LDMOS on thick-SOI technology for RF applications
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Superjunction LDMOS on thick-SOI technology for RF applications
چکیده انگلیسی

The feasibility of applying the superjunction (SJ) concept to a thick-SOI LDMOS transistor for RF base station applications is studied in this paper. The electrical performances of SJ thick-SOI LDMOS transistors are compared with those of the conventional RF LDMOS counterparts through an extensive 3D simulation work in terms of transconductance (gm), specific-on resistance (RON), voltage capability (VBR) and C–V characteristics. It is expected that SJ thick-SOI LDMOS structures will exhibit a significant RON reduction thanks to the N-doping concentration increment in the drift region. The charge balance in structures integrated on thick-SOI substrates with a P-type epitaxial layer requires a fit of the N and P pillar doping concentration, being the P pillar slightly lower doped than the N one. Variation of pillars doping concentrations is directly related to the device performance. Therefore, the RON/VBR trade-off and the RON components and the Cgd evolution are shown as a function of pillar doping ratio.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 39, Issue 6, June 2008, Pages 922–927
نویسندگان
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