کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5438364 1398183 2017 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical and chemical stability engineering of solution-processed indium zinc oxide thin film transistors via a synergistic approach of annealing duration and self-combustion process
ترجمه فارسی عنوان
مهندسی ثبات الکتریکی و شیمیایی ترانزیستورهای نازک اکسید روی دی اکسید کربن از طریق رویکرد هم افزایی مدت زمان انحلال و فرایند خودسوزی
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
چکیده انگلیسی
The electrical and chemical stability of solution-processed indium zinc oxide (IZO) channel thin-film transistors (TFTs) were engineered via a synergistic approach of annealing duration and self-combustion process. In particular, the amorphous IZO TFTs that were thermally treated at 400 °C for 3 h using the specific precursor combination to generate internal self-combustion energy showed the best electrical performance [high saturation mobility (μSAT)=2.7 cm2/V s] and stability [low threshold voltage shift (ΔVTH) under positive bias stress of 10.5 V] owing to the formation of oxide films with excellent metal-oxide-metal (M-O-M) bonds, fewer impurities, and an amorphous phase compared to IZO TFTs using other precursor formulas and annealing times. Longer annealing times led to a saturated M-O bond ratio and crystallization via extreme thermal annealing, which induced electrical degradation (low μSAT and high ΔVTH) of IZO TFTs. In the wet chemical patterning of electrodes, conventional acidic and basic wet etchants cause severe damage to the surfaces of the IZO channels; thus, insufficiently annealed IZO TFTs exhibited considerable degradation in terms of their on-current level and mobility. Alternatively, the TFTs subjected to an excessively long-term thermal annealing showed only a moderate decrease in mobility with the formation of small nanocrystals.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 43, Issue 12, 15 August 2017, Pages 8956-8962
نویسندگان
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