کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5438567 | 1398185 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Studies of thermoelectric transport properties of atomic layer deposited gallium-doped ZnO
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Studies of thermoelectric transport properties of atomic layer deposited gallium-doped ZnO Studies of thermoelectric transport properties of atomic layer deposited gallium-doped ZnO](/preview/png/5438567.png)
چکیده انگلیسی
The thermoelectric transport properties of atomic layer deposited (ALD) gallium doped zinc oxide (GZO) thin films were investigated to identify their potential as a thermoelectric material. The overall thermoelectric properties, such as the Seebeck coefficient and electrical conductivity, were probed as a function of Ga concentration in ZnO. The doping concentration was tuned by varying the ALD cycle ratio of zinc oxide and gallium oxide. The GZO was deposited at 250 °C and the doping concentration was modified from 1% to 10%. Sufficient thermoelectric properties appeared at a doping concentration of 1%. The crystallinity and electronic state, such as the effective mass, were investigated to determine the enhancement of the thermoelectric properties. The efficient Ga doping of GZO showed a Seebeck coefficient of 60 μV/K and an electrical conductivity of 1808.32 S/cm, with a maximum power factor of 0.66 mW/mK2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 43, Issue 10, July 2017, Pages 7784-7788
Journal: Ceramics International - Volume 43, Issue 10, July 2017, Pages 7784-7788
نویسندگان
Seung-Hwan Lee, Jung-Hoon Lee, Seong-Jin Choi, Jin-Seong Park,