Controlled Zr doping for inkjet-printed ZTO TFTs

This study examined the effects of controlled Zr doping on the electrical properties of inkjet-printed zinc-tin oxide (ZTO) thin-film transistors (TFTs). In contrast to previous reports, below a certain doping concentration, improved electrical properties were obtained due to the effectively suppressed oxygen vacancies, reduced trapped electrons, and controlled carrier concentrations. The 0.0025 M Zr-doped inkjet-printed ZTO TFTs showed higher mobility, higher on-to-off current ratio, lower threshold voltage, and lower subthreshold slope of 6.43 cm2/V s, 3.72×108, 3.35 V, and 0.53 V/dec, respectively, compared to the un-doped TFTs. The bias stability of the Zr-doped inkjet-printed ZTO TFT was also improved.