کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5438774 | 1398187 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Substrate temperature dependent bolometric properties of TiO2âx films for infrared image sensor applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this study, we investigated the substrate temperature (TS) dependent bolometric properties on TiO2âx films for infrared image sensor applications. The film crystallinity was changed from amorphous to rutile phase with increasing the TS. The decrement of resistivity with temperature in TiO2âx test-devices confirms the typical semiconducting property. All the test pattern devices have linear I-V characteristic performance which infers that the ohmic contact was well formed at the interface between the TiO2âx and the Ti electrode. The resistivity, activation energy (Ea) and the temperature coefficient of resistance (TCR) values of the device samples were decreased up to 200 °C of TS. The sample deposited at 200 °C had a significantly low 1/f noise parameter and a high universal bolometric parameter (β). However, at the substrate temperature of 250 °C, the Ea, TCR and the 1/f noise values were increased due to increase of the resistivity. The TCR and the 1/f noise values are proportional to the resistivity of TiO2âx films. As a result, the low resistivity of TiO2âx sample deposited at 200 °C is a viable bolometric material for uncooled IR image sensors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 42, Issue 15, 15 November 2016, Pages 17123-17127
Journal: Ceramics International - Volume 42, Issue 15, 15 November 2016, Pages 17123-17127
نویسندگان
Y. Ashok Kumar Reddy, Young Bong Shin, In-Ku Kang, Hee Chul Lee,