Effect of precursors' ratio on c-axis-oriented SmBCO film by MOCVD

Highly c-axis-oriented SmBa2Cu3O7−x (SmBCO) epitaxial films were deposited on (100)-LaAlO3 (LAO) single crystal substrates by metal-organic chemical vapor deposition using Sm(dpm)3, Ba(dmp)2/Ba(tmod)2 and Cu(dpm)2 as precursors. The effect of the precursors' ratio on the crystalline phases, composition and microstructure of films were investigated. The highly c-axis-oriented SmBCO films with stoichiometry were obtained at the precursors' molar ratio at Sm: Ba: Cu = 1: 5.12-5.54: 2.16-2.82, with the in-plane epitaxial orientation relationship of SmBCO[100] // LAO[010] and SmBCO[010] // LAO[001].