کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5438882 | 1398188 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Substrate placement angle-dependent growth of Ga/F co-doped ZnO nanostructures synthesized by hydrothermal process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Substrate placement angle-dependent growth of Ga/F co-doped ZnO nanostructures synthesized by hydrothermal process Substrate placement angle-dependent growth of Ga/F co-doped ZnO nanostructures synthesized by hydrothermal process](/preview/png/5438882.png)
چکیده انگلیسی
In this work, the effect of angle-dependent substrate placement on structural property and morphology of Ga/F co-doped ZnO nanostructures was investigated. The Ga/F co-doped ZnO (GFZO) nanostructures were grown on substrates with ZnO seeding layer placed at different tilted-angle by a hydrothermal process using Zn(NO3)2, NH4F, GaN3O9 for Zn, F and Ga sources and hexamethylenetetramine as sol stabilizer. The ZnO seeding layer was pre-deposited on glass substrates by dip-coating. The GFZO nanostructures were grown on ZnO substrate at different tilted-angles from 0° to 180° with respect to horizon. The effects of tilted angle of placed substrate on morphologies and structural properties were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), and UV-Vis spectroscopy. The results indicate that this growth parameter has a vital role on preferable growth direction, morphological structure and shape of the as-synthesized nanostructure products.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 43, Supplement 1, August 2017, Pages S529-S534
Journal: Ceramics International - Volume 43, Supplement 1, August 2017, Pages S529-S534
نویسندگان
Krisana Chongsri, Kanokthip Boonyarattanakalin, Wisanu Pecharapa,