کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5438920 | 1398189 | 2017 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Hole-patterned Ag layers were first used to form Si-doped ZnO (SZO)/hole-patterned Ag/SZO multilayers and their optical and electrical properties were characterized. Unlike conventional oxide/metal/oxide multilayers, all samples exhibited two characteristic features: (i) a sinusoidal wavelength dependence of the transmittance with double maxima, and (ii) undulation in the visible transmittance, but not in the infrared transmittance. With increasing SZO thickness, the transmittance maxima were red-shifted, and the visible transmittance window widened. The carrier concentration decreased from 7.42Ã1022 to 2.4Ã1022 cmâ3, and the sheet resistances varied from 7 to 10 Ω/sq with increasing SZO thickness. Haacke's figure of merit (FOM) was calculated for the SZO-based multilayer films. The 40 nm-thick SZO multilayers had the highest FOM of 15.9Ã10-3 Ω-1. Finite-difference time-domain (FDTD) simulations were undertaken to interpret the measured transmittance. Based on the FDTD simulations, the undulating transmittance was attributed to surface plasmon-polaritons.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 43, Issue 4, March 2017, Pages 3693-3697
Journal: Ceramics International - Volume 43, Issue 4, March 2017, Pages 3693-3697
نویسندگان
Jun Ho Kim, Hyeong-Seop Im, Dae-Woong Hwang, Sun-Kyung Kim, Dukkyu Bae, Young-Zo Yoo, Kyeong-Seok Lee, Tae-Yeon Seong,