کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5438980 | 1398190 | 2017 | 35 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The structural and electrical comparison of Y2O3 and Ti-doped Y2O3 dielectrics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The structural and electrical comparison of Y2O3 and Ti-doped Y2O3 dielectrics The structural and electrical comparison of Y2O3 and Ti-doped Y2O3 dielectrics](/preview/png/5438980.png)
چکیده انگلیسی
A Ti-doped Y2O3(Y2Ti2O5) dielectric on polycrystalline silicon followed by rapid thermal annealing results in improved characteristics including a higher effective dielectric constant, higher breakdown electric field, lower electron trapping rate, and larger charge-to-breakdown when compared with Y2O3. The performance of high-k Y2O3 and Y2Ti2O5 dielectrics were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), capacitance-voltage, and current density-voltage. Incorporating Ti into the Y2O3 dielectric imparts improvements in the structural and electrical performance of the material. The Y2Ti2O5 dielectric with 800 °C annealing treatment has the best performance among all the samples tested.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 43, Issue 3, 15 February 2017, Pages 3043-3050
Journal: Ceramics International - Volume 43, Issue 3, 15 February 2017, Pages 3043-3050
نویسندگان
Ming Ling Lee, Chyuan Haur Kao, Hsiang Chen, Chan Yu Lin, Yu Teng Chung, Kow Ming Chang,