کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5439262 | 1398194 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of negative bias voltage on structural and mechanical properties of nanocrystalline TiNx thin films treated in hot cathode arc discharge plasma system
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Ti thin films were grown by DC sputtering on a glass substrate and then nitrided in a hot cathode arc discharge plasma system, which is an effective approach to independently monitoring the plasma and nitriding parameters. The hardness of pristine Ti thin film is found to be ~3.06Â GPa, which increases upto ~16.08Â GPa with an increase in negative bias voltage to â140Â V and then decreases to ~15.05Â GPa for higher of â240Â V bias voltage. Similar kind of variation has been observed in crystallite size and surface roughness. Crystallite size is found to increase from 11.1Â nm (pristine Ti) to 14.8Â nm (for â140Â V) and then reduces to 11.9Â nm for -240Â V. Surface roughness increases from 2.78Â nm (pristine) to 6.84Â nm (for -140Â V), which is found to be 4.14Â nm for -240Â V. Optical and electrical measurements also reveal the strong impact of negative bias voltage on the bandgap and resistivity of the films. Above results are understood on the basis of diffusion of nitrogen ions for lower voltages and saturation of nitrogen ions in the host lattice for high voltages.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 42, Issue 16, December 2016, Pages 18019-18024
Journal: Ceramics International - Volume 42, Issue 16, December 2016, Pages 18019-18024
نویسندگان
Omveer Singh, Hitendra K. Malik, Raj P. Dahiya, Parmod Kumar,