کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5439860 1509969 2017 36 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of boron addition on the high temperature oxidation resistance of dense sSiBCN monoliths at 1500 °C
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Effects of boron addition on the high temperature oxidation resistance of dense sSiBCN monoliths at 1500 °C
چکیده انگلیسی
The high-temperature oxidation behavior of various boron addition SiBCN monoliths has been explored. Boron addition promotes the formation of new BxC phase and growth of SiC gains. At the initial stage of oxidation, surface BxC and BN(C) are prior to SiC generating B2O3. As time progresses, SiC oxidizes to SiO2 further reacted with B2O3 forming stable SiO2-B2O3 binary melt or borosilicate. Boron-enhanced SiC oxidation occurs immediately with the rapid consumption of BN(C), BxC and loss of B2O3 from borosilicate decomposition, thereby promoting oxidation rate. Substantial SiC and BN(C) in amorphous SiO2 for transition layer is the main structure feature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Corrosion Science - Volume 126, September 2017, Pages 10-25
نویسندگان
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