کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543995 871698 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication of silicon field-emission arrays using masks of amorphous hydrogenated carbon films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Fabrication of silicon field-emission arrays using masks of amorphous hydrogenated carbon films
چکیده انگلیسی

A fabrication process of silicon field-emission arrays is reported, in which thin films of amorphous hydrogenated carbon (a-C:H) are employed as masks in a two-step plasma-etching process, using pure SF6 and a mixture of SF6 and O2. In comparison with processes that involve SiO2 masks, the use of a-C:H improved the selectivity of the plasma etching, particularly in the case of pure SF6. An estimation of Utsumi's figure of merit showed that a significant enhancement in electric field can be achieved, as a result of the sharp tips fabricated through this process.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 38, Issue 1, January 2007, Pages 31–34
نویسندگان
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