کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544008 871698 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High speed SOI CMOS image sensor with pinned photodiode on handle wafer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
High speed SOI CMOS image sensor with pinned photodiode on handle wafer
چکیده انگلیسی

We have fabricated SOI CMOS active pixel image sensor with pinned photodiode on handle wafer. The structure of one pixel is a four-transistor type active pixel image sensor, which consists of a reset and a source follower transistor on seed wafer, and is comprised of a photodiode, a transfer gate, and a floating diffusion on handle wafer. The photodiode could be optimized for better quantum efficiency and low dark currents because the process of a photodiode on handle wafer is independent of that of transistors on seed wafer. Most of the wavelengths are absorbed within the visible range, because the optimized photodiode is located on the handle wafer. The response time of SOI CMOS active pixel sensor was about 2 times faster than that of bulk CMOS active pixel image sensor.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 38, Issue 1, January 2007, Pages 102–107
نویسندگان
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