Investigation of microstructure, electrical and photoluminescence behaviour of Ni-doped Zn0.96Mn0.04O nanoparticles: Effect of Ni concentration

Ni-doped Zn0.96Mn0.04O (Ni = 0, 2 and 4%) nanoparticles were synthesized by sol-gel method. Single phase wurtzite-like hexagonal structure was not altered by Ni doping. Ni enhanced the lattice distortion and reduced the nucleation and subsequent growth rate. Maximum electrical conductivity at Ni = 2% is due to more charge carriers. The change in PL emission was discussed by Ni doping and defect formation. Tuning of Eg and visible emission bands by Ni doping makes it more suitable for various nano photo-electronics device applications.125