کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5443039 1510772 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
LSE investigation of the thermal effect on band gap energy and thermodynamic parameters of BInGaAs/GaAs Single Quantum Well
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
LSE investigation of the thermal effect on band gap energy and thermodynamic parameters of BInGaAs/GaAs Single Quantum Well
چکیده انگلیسی
In this paper, we report on the experimental and theoretical study of BInGaAs/GaAs Single Quantum Well elaborated by Metal Organic Chemical Vapor Deposition (MOCVD). We carried out the photoluminescence (PL) peak energy temperature-dependence over a temperature range of 10-300 K. It shows the S-shaped behavior as a result of a competition process between localized and delocalized states. We simulate the peak evolution by the empirical model and modified models. The first one is limited at high PL temperature. For the second one, a correction due to the thermal redistribution based on the Localized State Ensemble model (LSE). The new fit gives a good agreement between theoretical and experimental data in the entire temperature range. Furthermore, we have investigated an approximate analytical expressions and interpretation for the entropy and enthalpy of formation of electron-hole pairs in quaternary BInGaAs/GaAs SQW.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 62, December 2016, Pages 267-272
نویسندگان
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