کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5443087 | 1510772 | 2016 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical properties of thin nanosilicon films
ترجمه فارسی عنوان
خواص نوری نانوسلیکونهای نازک
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
چکیده انگلیسی
Present paper is devoted to the investigation of the nanosilicon films internal structure effect on optical properties. Atomic force microscopy results reveal that the films with different thickness have fundamentally different grain size distribution (samples with the film thickness less than 50Â nm have single-mode grain size distribution, while samples with the film thickness more than 50Â nm have multi-mode distribution of grain size). The correlation between grain size of nanosilicon films, photoluminescence and scattering indicatrix was shown. Well-isolated vibronic structures were observed on the ultraviolet-visible photoluminescence spectrum from nanosilicon films with the thickness more than 10Â nm. The photoluminescence spectra in the red range correlate with the nanosilicon grain size distribution due to the effect of the quantum confinement. However, due to the complex shape of the grains mathematical modeling of photoluminescence spectrum is complicated. Both scattering indicatrix and photoluminescence reveal the multi-mode grain size distribution of the films with thickness more than 50Â nm. The comparative analysis of theoretical results of optical radiation scattering by nanosilicon films with experimental ones is illustrated. Mathematical modeling of the scattering indicatrix shows the correlation of average grain size from scattering and photoluminescence data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 62, December 2016, Pages 612-620
Journal: Optical Materials - Volume 62, December 2016, Pages 612-620
نویسندگان
Viktor V. Buchenko, Tatiana V. Rodionova, Anastasia S. Sutyagina, Andrey A. Goloborodko, Volodymyr V. Multian, Andrii V. Uklein, Volodymyr Ya. Gayvoronsky,