کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544685 871777 2015 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hot carrier effect on a single SiGe HBT's EMI response
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Hot carrier effect on a single SiGe HBT's EMI response
چکیده انگلیسی


• The EMI effect on the DC operating bias point of a SiGe HBT is investigated.
• Hot carrier effect on the EMI induced DC offsets in SiGe HBT is investigated.
• Difference between the EMI response of a SiGe HBT and a Si BJT is analyzed.

This paper describes the rectification responses exhibited by two kinds of SiGe HBTs when electromagnetic interference (EMI) is injected at the base of the transistor. The variation of the EMI induced DC offset after hot carrier stress is also studied. The experimental results show that the EMI response of a single SiGe HBT is different from that of a Si BJT. With interference present, the DC current gain increases at low base-emitter (BE) bias and decreases at larger VBE values. The absence of AC crowding induced DC crowding along with the base recombination current accounts for the increase of current gain. The base-width effect and the high-injection effect tend to decrease the gain in presence of interference. The simulation results show that the Gummel–Poon model is able to quantitatively model the EMI response of a SiGe HBT.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 55, Issue 12, Part B, December 2015, Pages 2627–2633
نویسندگان
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