کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544870 871791 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Estimation of the degradation rate of multi-crystalline silicon photovoltaic module under thermal cycling stress
ترجمه فارسی عنوان
برآورد میزان تخریب مولکول فتوولتائیک سیلیکون چندبلوری تحت استحکام چرخه حرارتی
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
چکیده انگلیسی


• This paper describes the degradation rate (RD) prediction model of crystalline PV module.
• The RD prediction model is developed which based on thermal cycling results.
• The finite element method was employed to study the creep strain energy density of solder.
• RD in benchmark condition is predicted and compared with those of accelerated conditions.

The overall power of an outdoor-exposed photovoltaic (PV) module decreases as a result of thermal cycling (TC) stress, due to the formation of cracks between the solder and metal. In this study, the thermal fatigue life of solder (62Sn36Pb2Ag) interconnection between copper and silver metallization in PV module was studied. This paper describes in detail the degradation rate (RD) prediction model of solder interconnection for crystalline PV module. The RD prediction model is developed which based on published constitutive equations for solder and TC test results on actual PV module. The finite element method was employed to study the creep strain energy density of solder interconnections in TC conditions. Three types of accelerated tests were conducted to determine the prediction model parameters. RD in benchmark condition is predicted and compared with those of TC conditions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 54, Issue 8, August 2014, Pages 1562–1566
نویسندگان
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