Analytical model for threshold voltage of double gate bilayer graphene field effect transistors

• The potential distribution of double gate BLG-FETs is modelled for the first time.
• The quantum capacitance is modelled and its effect is considered in potential model.
• The threshold voltage of double gate BLG-FETs is modeled.

A new model for threshold voltage of double-gate Bilayer Graphene Field Effect Transistors (BLG-FETs) is presented in this paper. The modeling starts with deriving surface potential and the threshold voltage was modeled by calculating the minimum surface potential along the channel. The effect of quantum capacitance was taken into account in the potential distribution model. For the purpose of verification, FlexPDE 3D Poisson solver was employed. Comparison of theoretical and simulation results shows a good agreement. Using the proposed model, the effect of several structural parameters i.e. oxide thickness, quantum capacitance, drain voltage, channel length and doping concentration on the threshold voltage and surface potential was comprehensively studied.