کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5449604 | 1512531 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improving the â3Â dB bandwidth of medium power GaN-based LEDs through periodic micro via-holes for visible light communications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Improving the â3Â dB bandwidth of medium power GaN-based LEDs through periodic micro via-holes for visible light communications Improving the â3Â dB bandwidth of medium power GaN-based LEDs through periodic micro via-holes for visible light communications](/preview/png/5449604.png)
چکیده انگلیسی
Medium power GaN-based light emitting diode (LED) chips with periodic micro via-holes are designed and fabricated. The active area of each chip is 200 µmÃ800 µm and the diameter of each micro via-hole is 50 µm. For comparison, an LED chip with only one big via-hole (Diameter=86.6 µm) is also fabricated under the same conditions as the control partner. Both kinds of LED chips have an equal effective PN junction area. Experimentally, the LED with periodic via-holes exhibits higher output optical power and the â3 dB modulation bandwidth by about 33% and 48%, respectively, than the LED with only one bigger via-hole. The method of concurrently improving modulation and optical performances of power-type LED chips through periodic micro via-holes take the advantages of easy fabrication, suitable for mass-production.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 392, 1 June 2017, Pages 175-179
Journal: Optics Communications - Volume 392, 1 June 2017, Pages 175-179
نویسندگان
Zheng Zhou, Bing Yan, Dongdong Teng, Lilin Liu, Gang Wang,