کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5450368 | 1398500 | 2017 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spintronic materials and devices based on antiferromagnetic metals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
In this paper, we review our recent experimental developments on antiferromagnet (AFM) spintronics mainly comprising Mn-based noncollinear AFM metals. IrMn-based tunnel junctions and Hall devices have been investigated to explore the manipulation of AFM moments by magnetic fields, ferromagnetic materials and electric fields. Room-temperature tunneling anisotropic magnetoresistance based on IrMn as well as FeMn has been successfully achieved, and electrical control of the AFM exchange spring is realized by adopting ionic liquid. In addition, promising spin-orbit effects in AFM as well as spin transfer via AFM spin waves reported by different groups have also been reviewed, indicating that the AFM can serve as an efficient spin current source. To explore the crucial role of AFM acting as efficient generators, transmitters, and detectors of spin currents is an emerging topic in the field of magnetism today. AFM metals are now ready to join the rapidly developing fields of basic and applied spintronics, enriching this area of solid-state physics and microelectronics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Progress in Natural Science: Materials International - Volume 27, Issue 2, April 2017, Pages 208-216
Journal: Progress in Natural Science: Materials International - Volume 27, Issue 2, April 2017, Pages 208-216
نویسندگان
Y.Y. Wang, C. Song, J.Y. Zhang, F. Pan,