کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5450435 | 1398503 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and dielectric study of nano-crystalline single phase Sn1âxNixS (xNi=0-10%) showing room temperature ferromagnetism
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کلمات کلیدی
Dielectric properties - خواص دی الکتریکCo-precipitation method - روش هماهنگی بارشRoom temperature ferromagnetism - فرومغناطیس دمای اتاقNear edge X-ray absorption fine structure spectroscopy - نزدیک لبه جذب اشعه ماوراء بنفش طیف سنجی ساختار خوبDiluted magnetic semiconductors - نیمه هادی مغناطیسی رقیق شده
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural and dielectric study of nano-crystalline single phase Sn1âxNixS (xNi=0-10%) showing room temperature ferromagnetism Structural and dielectric study of nano-crystalline single phase Sn1âxNixS (xNi=0-10%) showing room temperature ferromagnetism](/preview/png/5450435.png)
چکیده انگلیسی
SnS is a promising IV-VI semiconductor, which is very less explored for diluted magnetic semiconducting and dielectric applications. In this study, the Ni doping (xNi=0-10Â mol%) effects on SnS host lattice were investigated. A simple and low cost co-precipitation technique was employed to grow Ni doped SnS powders. The X-ray diffraction confirmed single phase orthorhombic structure with a nano-crystalline nature that was further verified through the surface structure observed by scanning electron microscopy. Near edge x-ray absorption fine structure spectroscopy revealed a shift in the Ni absorption edge towards higher energy, depicting the formation of Ni+3 oxidation state. The impedance measurements, in the frequency range 1Â kHz to 20Â MHz, depict that owing to the excellent sensitivity to the electromagnetic radiations at the low energy, the Ni doped SnS finds potential applications in various energy related devices. Vibrating sample magnetometer measurements have elucidated room temperature ferromagnetism, which depicts potential memory device applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Progress in Natural Science: Materials International - Volume 27, Issue 3, June 2017, Pages 303-310
Journal: Progress in Natural Science: Materials International - Volume 27, Issue 3, June 2017, Pages 303-310
نویسندگان
B. Parveen, M. Hassan, S. Atiq, S. Riaz, S. Naseem, M. Asif Toseef,